The migration of atomic H in material which had been damaged by Ar implantation was studied. The Ar was implanted with 2 distinct doses which straggled the amorphization threshold. Atomic H was then introduced via low-energy ion implantation. The deactivation of dopant B atoms by atomic H was markedly reduced in wafers which had been subjected to low-energy Ar-ion implantation. Trapping of H in the defect sites which were generated by Ar implantation, and perhaps the formation of molecular H in the implanted region, hindered H permeation into the bulk.

S.Ashok, K.Srikanth: Journal of Applied Physics, 1989, 66[3], 1491-4