The evolution of H was studied by using gas effusion spectroscopic and infra-red spectroscopic studies of multi-layer films of amorphous hydrogenated Si and Si3N4. The H effusion mechanisms in 3 temperature regimes were explained in terms of pipe diffusion, and the diffusion was limited by the diffusion coefficients of the barrier and well layers. The effective thickness of the interfacial region was estimated to be about 2nm.

S.Nonomura, M.Ohta, H.Suzuki, T.Muraki, S.Kusakabe, S.Nitta: Journal of Non-Crystalline Solids, 1991, 137-138, 1139-42