Secondary ion mass spectrometry measurements confirmed that the rate of H diffusion in p-type material was higher than that in n-type material. Here, the difference was not as large as that observed in the case of ion-implanted specimens. This discrepancy was attributed to the effect of H capture at the boundaries of implanted layers in the latter case.

E.M.Omelyanovskii, A.V.Pakhomov, A.J.Polyakov, O.M.Borodina: Fizika i Tekhnika Poluprovodnikov, 1989, 23[1], 178-80 (Soviet Physics - Semiconductors, 1989, 23[1], 112-3)