Layers of Ga-implanted p+ material were exposed to atomic H from a plasma. It was found that H concentrations which were up to 7.5 times greater than the peak Ga concentration (7 x 1019/cm3) segregated into the p+ layer during treatment at 200C. The shape of the H concentration profile was similar to that of the Ga profile. Ion channelling experiments showed that the H atoms did not occupy simple high-symmetry sites in the lattice. The use of electron microscopy revealed the presence of extended (111)-type stacking fault defects which were associated with the layer of high H content.

A.D.Marwick, G.S.Oehrlein, M.Wittmer: Applied Physics Letters, 1991, 59[2], 198-200