Hydrogen was introduced, using a radio frequency plasma, into Czochralski material at 275C. Most of the H was trapped near to the surface, where it formed Si-H bonds, while a small fraction diffused into the Si. This fraction enhanced O-related thermal donor formation rates in a diffusion-like profile during subsequent furnace annealing at temperatures of between 350 and 400C. It was found that a H concentration that was equal to only a few percent of the O concentration was sufficient to enhance the thermal donor formation rate; thus indicating a H-catalyzed process. The maximum concentrations of thermal donors after annealing at 400C exceeded those for retained H. A mechanism for H diffusion through O traps, and correlated H-promoted O diffusion, was proposed in order to explain the enhanced thermal donor formation rates.

H.J.Stein, S.Hahn: Journal of Applied Physics, 1994, 75[7], 3477-84