A comprehensive kinetic model was developed for the diffusion of H atoms into B-doped Si during low-temperature plasma hydrogenation. The model accounted for several commonly observed features of the secondary ion mass spectrometry profiles of hydrogenated p-type samples with various resistivities. In high-resistivity material, the H profile was explained by invoking H dimer formation which, for short plasma exposure times, appeared to obey steady-state kinetics. The H profiles in more heavily doped p-type samples, which were often assumed to be controlled by a single pairing reaction between H+ ions and dopant sites, were shown to be consistent with the trapping of several H atoms at each acceptor site.

J.T.Borenstein, J.W.Corbett, S.J.Pearton: Journal of Applied Physics, 1993, 73[6], 2751-4