In order to understand the H diffusion mechanism in amorphous films which had been prepared by chemical vapor deposition, changes in H depth profiles were studied as a function of the plasma exposure time. It was found that the post-hydrogenation behavior could be explained by a model which involved the fast diffusion of atomic H through weakly bound sites such as interstitials, capture by reactive sites such as weak Si-Si bonds and dangling bonds, and exchange between weakly bound and bonded H atoms.

M.Nakamura, Y.Misawa: Journal of Applied Physics, 1990, 68[3], 1005-8