The equilibration rate of frozen defects in P-doped hydrogenated amorphous material was described by the stretched-exponential time dependence, exp[-(t/K)B], where B was between zero and unity. It had been proposed that the process which eliminated frozen defects was diffusion between interstitial sites; with a diffusivity that was dispersive in time due to the distribution of H trapping sites on weak Si-Si bonds. Here, this proposal was criticised. The alternative suggestion was based upon the assumption that the relevant process was the jumping of H from the Si-H bond and into the interstitial site.

Y.Osaka: Japanese Journal of Applied Physics, 1991, 30[11A], 2705-8