The behavior of (100) surface defects which were produced by Fe contamination were studied by using transmission electron microscopy. After annealing (1150C, 1h) and heat-treatment (850C, 2h), Fe-containing precipitates were observed close to the interface with SiO2 which formed during annealing. The results demonstrated that Fe atoms diffused into the Si substrate during annealing at 1150C, and precipitated at Si/SiO2 interfaces. The Fe atoms which were left on the surface formed inclusions in the surface SiO2 layer. During additional thermal oxidation at 1000C, oxidation-induced stacking faults formed. Unlike those in Cu- or Ni-contaminated material, the latter were not decorated.

S.Sadamitsu, A.Sasaki, M.Hourai, S.Sumita, N.Fujino: Japanese Journal of Applied Physics, 1991, 30[8], 1591-6