Delta-doped layers were produced by depositing 0.39 of a monolayer of Ga onto the (001) surface. The dopant atoms were then buried by means of solid-phase epitaxy. It was found, using Rutherford back-scattering spectrometry, that some 30% of the Ga atoms were located at substitutional sites; in a peak that was less than 1nm wide. The other atoms were at the surface. The surface atoms desorbed upon annealing at 985K, while the buried atoms were only slightly redistributed. The profile completely degraded at temperatures which were slightly higher than 1100K.

P.M.Zagwijn, Y.N.Erokhin, W.F.J.Slijkerman, J.F.Van der Veen, G.F.A.Van der Walle, D.J.Gravesteijn, A.A.Van Gorkum: Applied Physics Letters, 1991, 59[12], 1461-3