The redistribution of Ga in amorphous material by means of medium-energy ion scattering was studied at temperatures ranging from 560 to 830K. During the first 10s of annealing, the diffusivity exhibited a transient behavior that was attributed to a change in the relaxation state of the amorphous matrix. At temperatures of between 560 and 830K, the diffusivity during relaxation was enhanced by 7 to 2 orders of magnitude; as compared with the value for bulk amorphous material.

P.M.Zagwijn, W.J.Huisman, A.Polman, E.Vlieg, A.H.Reader, D.J.Gravesteijn: Journal of Applied Physics, 1994, 76[10], 5719-23