The first experimental identification of the diffusion mechanism of Ge was presented. By using thermal nitridation reactions to create an excess of either self-interstitials or vacancies, it was established that (under equilibrium conditions at 1050C) Ge diffusion occurred via both substitutional-interstitial interchange and vacancy mechanisms; with comparable contributions arising from each of them. If previous conjectures, that Ge diffusion in Si was similar to Si self-diffusion, were correct the present findings supported the idea that Si self-diffusion took place via both interstitial and vacancy mechanisms.

P.Fahey, S.S.Iyer, G.J.Scilla: Applied Physics Letters, 1989, 54[9], 843-5