The diffusion of Ge, after the solid-phase epitaxial growth of material which had been amorphized by Ge2+ implantation, was measured using back-scattering spectrometry. Asymmetrically enhanced diffusion was observed in [111]-type oriented samples which were annealed at 1050C. A high concentration of twins, which was detected using cross-sectional transmission electron microscopy, appeared to be related to the enhancement. There was a large difference in Ge diffusivity and defect structure between [100]-type and [111]-type oriented samples.

R.Turan, B.Hugsted, O.M.Lonsjo, T.G.Finstad: Journal of Applied Physics, 1989, 66[3], 1155-8