Multi-layered amorphous Si/amorphous Ge films with a periodicity of 8 to 10nm were obtained by using ultra-high vacuum evaporation techniques. The interdiffusion coefficient (table 56) for the system was determined by measuring the intensity, of the neutron (000) forward scattering satellites arising from the modulation, as a function of annealing temperature and time. The temperature dependence of the interdiffusion coefficient at temperatures of between 620 and 710K could be described by the expression:

D(cm2/s) = 0.00634 exp[-2.35(eV)/kT]

C.Janot, A.Bruson, G.Marchal: Journal de Physique, 1986, 47[10], 1751-6

Table 56

Diffusion in Si/Ge Films