Transient ion drift in the depletion regions of a Schottky barrier was used to investigate diffusion in B- or Al-doped material. In order to test the validity of a model that was used to extract the diffusion coefficients, the method was applied to the case of Li diffusion. Excellent agreement with published diffusivity data was found for Li ions.

A.Zamouche, T.Heiser, A.Mesli: Applied Physics Letters, 1995, 66[5], 631-3