A secondary ion mass spectrometry study of the co-implantation of N, C and O into float-zone material, followed by rapid thermal annealing (10s) at various temperatures, was used to investigate the anomalous diffusion behavior of N. The results could be only partially explained by a model which involved paired N atom diffusion. The complexity of N diffusion in ion-implanted samples, with and without co-implants (and the expectation that post-annealing N could be in many different forms), suggested that studies which used N implantation in fundamental studies of N-related defects could be misleading.

R.S.Hockett: Applied Physics Letters, 1989, 54[18], 1793-5