The diffusivity of O in heavily Sb-doped Czochralski-type material was measured, at temperatures ranging from 950 to 1100C, by means of secondary ion mass spectrometry. It was found that the diffusion coefficient exhibited no dependence upon the Sb concentration. The results (table 61) indicated a diffusion activation energy of 2.68eV.
M.Pagani: Journal of Applied Physics, 1990, 68[7], 3726-8
Table 61
Diffusion of O in Sb-Doped Si
T (C) | D (cm2/s) |
950 | 1.2 x 10-11 |
950 | 1.3 x 10-11 |
950 | 8.7 x 10-12 |
1025 | 2.5 x 10-11 |
1100 | 1.3 x 10-10 |
1100 | 1.1 x 10-10 |
1100 | 8.2 x 10-11 |