The migration of O in C-doped material, during extended isochronal annealing at temperatures ranging from 460 to 850C, was studied. It was found that, at temperatures below 690C, enhanced O diffusion occurred. The diffusivity at the highest temperature was equal to about 7.3 x 10-13cm2/s. This behavior had previously been attributed to the effect of mobile C and O complexes. It was suggested here that these complexes could also act as an activated state in an enhanced diffusion process.

W.Wijaranakula: Journal of Applied Physics, 1990, 68[12], 6538-40