Direct measurements were made of the diffusivity of interstitial O in Sb-doped Czochralski material at temperatures ranging from 750 to 1150C (table 66). Using secondary ion mass spectroscopy of the out-diffusion profiles, it was shown that the diffusivity was the same as that for lightly B-doped crystals which were heated under identical conditions over the temperature range studied.

A.S.Oates, W.Lin: Applied Physics Letters, 1988, 53[26], 2659-61

 

 

 

Table 66

Diffusivity of O in Doped Si

 

Type

T (C)

D (cm2/s)

p

1150

2.4 x 10-10

p

1050

6.5 x 10-11

p

950

7.3 x 10-12

p

950

6.4 x 10-12

p

850

1.4 x 10-12

p

850

7.5 x 10-13

p

750

3.3 x 10-14

p

750

2.9 x 10-14

n

1150

4.3 x 10-10

n

1050

6.5 x 10-11

n

950

1.4 x 10-11

n

950

1.1 x 10-11

n

850

1.7 x 10-12

n

750

9.6 x 10-14