Wafers with a range of initial O and C concentrations were annealed at 450, 475, or 500C, for up to 500h. The interstitial O concentration was monitored every 20h. It was found that the rate of O loss scaled as the fifth power of the O concentration in wafers which were annealed at temperatures below 500C.

M.P.Guse, R.Kleinhenz: Journal of Applied Physics, 1992, 72[10], 4615-8