The solid-state out-diffusion of O from a substrate to an epitaxial layer was investigated by using micro-Fourier transform infra-red measurements in a transverse wafer cross-sectional configuration. The interstitial O concentrations, which were obtained by analysing the 1107/cm absorption band, indicated that an O content (clearly detectable via the use of infra-red techniques) was present in an epitaxial layer near to the interface. It was suggested that this was the first evidence for O out-diffusion from the substrate and into the epitaxial layer.

M.Geddo, B.Pivac, A.Borghesi, A.Stella, M.Pedrotti: Applied Physics Letters, 1990, 57[15], 1511-3