The out-diffusion behavior of O from heat-treated Czochralski material was investigated by using secondary ion mass spectroscopy. The results showed that O diffusion was greatly retarded by O precipitation. This strongly supported a vacancy-dominated diffusion mechanism for O. In C-doped material, the diffusion of O was greatly enhanced at 750C, but was significantly retarded at 1000C. The enhanced diffusion was attributed to the formation of fast-diffusing O-C complexes.

F.Shimura, T.Higuchi, R.S.Hockett: Applied Physics Letters, 1988, 53[1], 69-71