The out-diffusion of O from Czochralski material was studied under atmospheres of O, N, and Ar/H(10%). The enhancement of O diffusion by H was confirmed. Also, heat treatment in a halogen lamp furnace led to a 100-fold higher O diffusion coefficient in a neutral atmosphere, and to a 1000-fold enhancement in an hydrogenated atmosphere. In the latter case, a level of 6.5 x 1017/cm3 was observed in the O profile at the sample surface. Electron-hole pair generation under intense ultra-violet irradiation, perhaps combined with the presence of H, was suggested to be responsible for anomalously high O diffusion during rapid thermal processing.

C.Maddalon-Vinante, D.Barbier, H.Erramli, G.Blondiaux: Journal of Applied Physics, 1993, 74[10], 6115-9