An empirical solution was developed for treating O distributions in thin epitaxial layers and substrate wafers which had been heavily doped with B and Sb. The results of secondary ion mass spectroscopic analyses indicated that heavy doping with B or Sb had no effect upon O out-diffusion during epitaxial deposition. In contrast to slow-diffusing species such as B and Sb, the plane at which the O concentration was equal to 50% of the bulk O concentration did not remain at the epitaxial layer/substrate interface, but was a function of the effective diffusion length of O atoms for the overall epitaxy process.

W.Wijaranakula: Journal of Applied Physics, 1993, 73[2], 1004-6