Shallower carrier concentration profiles were observed in 50keV P+-implanted Si(100) after annealing (1000C, 1h) if a buried amorphous layer was formed by further irradiation with 1MeV Si+ ions before annealing. The secondary defects which were formed in the MeV Si+-damaged region acted as gettering sites for the collection of the interstitials, from shallower depths, which were responsible for the transient diffusion of P. Therefore, transient P diffusion was reduced and the carrier concentration profiles become shallower.

Q.Zhao, Z.Wang, T.Xu, P.Zhu, J.Zhou: Applied Physics Letters, 1993, 62[24], 3183-5