Auger electron spectroscopic depth profiles of the dopant in the surface layers of a wafer were determined down to depths which were not usually achieved by using normal ion etching techniques. It was found that there were substantial deviations of the experimentally determined curve from the expected complementary error function. The shape of the diffusion profile, and the presence of an inflection, could be satisfactorily explained by an acceleration of the diffusion by an electric field and by a change in the diffusion coefficient during the dissociation of (PV)- complexes.

B.M.Kostishko, A.M.Orlov, T.G.Levkina: Neorganicheskie Materialy, 1994, 30[6], 853-5 (Inorganic Materials, 1994, 30[6], 794-5)