The non-equilibrium impurity diffusion of dopants in monocrystalline Si was carried out by means of the controlled surface injection of self-interstitials and vacancies. By varying the parameters of the surface oxide layer during the P diffusion process, it was possible to produce quantum-sized profiles and p-n junctions with dimensions that could be controlled within the 1 to 22nm range.

N.T.Bagraev, L.E.Klyachkin, V.L.Sukhanov: Semiconductor Science and Technology, 1991, 6[7], 577-81