The effect of precipitation upon P diffusion was investigated at temperatures of 850 or 1000C in heavily implanted (4 x 1016P+/cm2) and laser-annealed specimens. By varying the amount of precipitated P, while keeping the dopant concentration constant, it was shown that precipitation did not generate interstitials in sufficient amounts to affect P diffusion.

R.Angelucci, S.Solmi, Q.Zini: Physica Status Solidi A, 1986, 96[2], 541-6