Samples, with or without interstitial dislocation loops, were implanted with P to doses which were below the amorphization threshold. The loops were produced by Si+ implantation to high doses, followed by annealing (900C, 0.5h). Triple-crystal X-ray diffraction, junction depth measurements, and secondary ion mass spectrometry were used to study implantation defects and P distributions. Annealing was carried out in a furnace at temperatures of between 600 and 900C, or by electron-beam treatment (1000C, 10s). It was found that the presence of loops markedly reduced anomalous P diffusion. This was attributed to the effect of absorption, by the loops, of excess interstitials arising from dissolution of the clusters which were produced by P implants.

M.Servidori, S.Solmi, P.Zaumseil, U.Winter, M.Anderle: Journal of Applied Physics, 1989, 65[1], 98-104