The behavior of Co was studied with respect to P doping via in-diffusion or via SiO2 growth. It was found that both techniques led to moderate gettering. However, cooperation of the 2 processes led to strong gettering of Co. The gettering behavior was tentatively attributed to a coupling of local currents of Si self-interstitials, which were generated during P diffusion gettering, and of 3d impurities on substitutional sites.

W.Schröter, R.Kühnapfel: Applied Physics Letters, 1990, 56[22], 2207-9