The diffusivity of P in iso-concentration backgrounds under inert conditions was investigated. Low doses of P were implanted into wafers that were doped with As and B. These samples were annealed to remove any damage, and secondary ion mass spectroscopy measurements were made of the as-implanted samples. The wafers were then annealed at 900 and 1100C for 1h and 0.5h, respectively. The wafer profiles were measured by using secondary ion mass spectroscopy. The P diffusivity was measured for 5 different dopant concentrations. The results showed that a double-negative interstitial component of P was needed in order to model the data adequately. Also, heavily B-doped samples exhibited significantly retarded diffusivity at 1100C. It was suggested that this reflected P-B pairing or significant strain effects upon diffusion.

J.P.John, M.E.Law: Applied Physics Letters, 1993, 62[12], 1388-9. See also: Journal of the Electrochemical Society, 1993, 140[5], 1489-91