The diffusion of ion-implanted P in the presence of various concentrations of radiation defects, during rapid thermal annealing and furnace annealing, was investigated by using electrical methods. The diffusion of P in layers which had been previously doped with Ge was also studied. It was established that part of the inserted P was captured, during heat treatment, by surplus vacancies. These traps governed the displacement of the P distribution towards the surface. The remainder of the impurity, in the form of P-Si complexes, accelerated P diffusion. The temperature independence, over a wide temperature range, of the effective coefficient for the diffusion of implanted P during rapid thermal annealing was attributed to the closeness of the activation energy for diffusion of the P-Si complexes and of the activation energy which was required to anneal it.

A.R.Chelyadinskii, H.I.H.Taher: Physica Status Solidi A, 1994, 142[2], 331-8