The effects of implantation damage upon P diffusion during rapid thermal annealing and conventional heat treatment at 750 to 900C were investigated. A comparison of the dopant profiles and junction depths in damaged and undamaged regions demonstrated that Si+ implantation under the typical conditions used for pre-amorphization produced a markedly enhanced diffusion of P atoms.

A.Jacques, A.George, X.Baillin, J.J.Bacmann: Philosophical Magazine A, 1987, 55[2], 165-81