Ion implantation produces point defects, during annealing, which can significantly enhance dopant diffusion. This effect was studied for implant diffusion at low temperatures. Enhanced diffusion was detected below critical dopant concentrations. The latter concentrations depended only upon the temperature. Enhanced diffusion occurred below the well-known kink concentration.

R.B.Fair: Journal of the Electrochemical Society, 1990, 137[2], 667-71