The diffusion of P in a Si-on-insulator structure, formed by heavy doses of O-implantation, was compared with diffusion in normal bulk wafers. It was found that the non-equilibrium effects upon diffusion during direct nitridation or nitridation of a SiO2 layer were mitigated in the present structures. Under oxidizing conditions, there were no large differences in the diffusion behavior of bulk and Si-on-insulator samples. It was also demonstrated that the spatial extent of the low-concentration tail region of P diffusion from POCl3 was reduced in the Si-on-insulator structure.

P.Fahey, S.Solmi: Journal of Applied Physics, 1986, 60[12], 4329-32