An investigation was made of P diffusion out of an ion-implanted layer at 1000C under Ar pressures of up to 2kbar. The implanted P dose was 0.003C/cm2. An increase in the depth of P atom penetration, compared with annealing in the absence of pressure, was observed. The effect depended non-linearly upon the duration of the pressure treatment, and was essentially absent during the initial stages of annealing. A considerable increase in the annealing time also reduced the acceleration. The observed effect was explained by a 2-stream diffusion model which assumed that the pressure increased the concentration of interstitial P atoms in the diffusion zone by altering the defect structure of an implanted layer.

A.S.Vasin, V.I.Okulich, V.A.Panteleev: Fizika i Tekhnika Poluprovodnikov, 1989, 23[3], 483-7 (Soviet Physics - Semiconductors, 1989, 23[3], 302-4)