Secondary ion mass spectrometry was used to study the diffusion of P which had been implanted into the Si, and stimulated by proton irradiation. The latter irradiation was carried out at 700C by using an energy of between 50 and 100keV and doses of between 1016 and 1017/cm2. A maximum which was observed in the impurity distribution, after radiation-stimulated diffusion and at depths beyond the range of the implanted ions, was attributed to the accumulation of impurities at radiation defects of interstitial type which had been created during the implantation.

V.V.Kozlovskii, V.N.Lomasov: Fizika i Tekhnika Poluprovodnikov, 1987, 21[2], 360-2. (Soviet Physics - Semiconductors, 1987, 21[2], 220)