The use of C or O as a diffusion-suppressing agent for P was suggested. In order to study this complex phenomenon, an experimental study was made of the effects of low-dose Si, C and O implantation damage upon the diffusion of lightly-doped P layers. The effects of Si and C co-implantation upon the diffusion of P were also studied. Finally, a lightly doped drain structure was annealed in the presence of implanted C. It was found that C was the most effective diffusion-suppressing agent among the present 3 species. The results of the second experiment suggested that C strongly affected the interstitial profile and thus the final P profile.

S.Chaudhry, M.E.Law: Journal of the Electrochemical Society, 1994, 141[12], 3516-21