The effects of low-dose Si implantation damage upon the diffusion of low concentrations of P in wafer samples were investigated. The dopant was implanted to low doses, and was then pre-annealed in order to remove any self-damage. Enhanced P diffusion was observed by directly comparing the dopant profiles in damaged and undamaged regions. Monitoring of the effective P diffusivity at various annealing temperatures and times revealed that the enhanced diffusion was a transient process with a time constant that was larger at lower temperatures. This enhancement was larger and of longer duration, the lower the annealing temperature. It was noted that As diffusion, in such damaged regions, did not exhibit any enhancement; thus implying that the defects which were induced by Si implantation had differing interaction mechanisms for each type of dopant.

H.Park, M.E.Law: Applied Physics Letters, 1991, 58[7], 732-4