The migration of P during surface oxidation in dry O was measured at 900 to 1100C, for times of between 600s and 4h. During 0.5h oxidation at 900C, the P diffusivity was 15 times greater than it would have been in an inert ambient. The enhancement of P diffusion decreased with increasing temperature. An increase in the oxidation time at a given temperature led to a decrease in the diffusion enhancement.

P.A.Packan, J.D.Plummer: Journal of Applied Physics, 1990, 68[8], 4327-9