A study was made of the transient enhanced diffusion which resulted from implantation damage, and which led to more rapid dopant migration. Experiments were performed here by using P and dislocation markers to compare transient enhanced diffusion effects. The results showed that P diffusion was enhanced considerably more than B diffusion during damage annealing. Dislocation growth indicated that a number of interstitials that was greater than the damage dose was captured during annealing. It was found that the time that was required in order to saturate dislocation growth agreed well with P diffusion saturation, and was greater than the B saturation.

J.Xu, V.Krishnamoorthy, K.S.Jones, M.E.Law: Journal of Applied Physics, 1997, 81[1], 107-11