Transient enhanced P diffusion, following implantation with Si or Ar ions to low doses, was investigated. Both treatments led to up-hill P diffusion, due to defect gradients, but the resultant profiles were quite different because of differences in the initial defect distributions. It was concluded that these experiments supported an interstitial pair diffusion mechanism for P, and revealed the importance of bulk recombination in determining defect distributions for Ar damage annealing.

M.D.Giles: Applied Physics Letters, 1993, 62[16], 1940-2