Two-dimensional P diffusion was studied after furnace annealing or rapid thermal annealing. It was found that there was a considerable disagreement between measured and simulated profiles in the lateral direction; especially in regions which were directly under a mask edge. These differences were attributed to inaccuracies in the initial implant simulation, to the absence of damage annealing modelling in the simulation, and to the effect of stress (in the vicinity of the window edge) upon diffusion. When vacancy generation (resulting from reaction of the oxide with the Si substrate) was included in the simulation, better agreement with experimental profiles was found.

R.Subrahmanyan, H.Z.Massoud, R.B.Fair: Journal of the Electrochemical Society, 1990, 137[5], 1573-81