Equations for oxidation-enhanced and oxidation-retarded diffusion, and for oxidation-induced stacking faults, were solved simultaneously by using experimental results which had been obtained at 1100C. A simple relationship between the concentrations of self-interstitials and vacancies was assumed in order to obtain the solutions. It was concluded that the product of the concentrations of self-interstitials and vacancies was almost equal to the value at thermal equilibrium, and that the fractional component of the interstitialcy mechanism for P-diffusion was larger than 0.5. This showed that the growth of oxidation-induced stacking faults was caused mainly by vacancy undersaturation, and that oxidation-enhanced diffusion of P occurred.

M.Yoshida, S.Matsumoto, Y.Ishikawa: Japanese Journal of Applied Physics, 1986, 25[7], 1031-5