A previous model for P diffusion was extended so as to include 4 additional reactions between substitutional P, Si self-interstitials, vacancies, and P-defect pairs. All of the reaction rates used in the model were based upon physically plausible kinetic estimates. Numerical solution of the resultant system of 8 coupled partial differential equations yielded profiles which were in good agreement with experiment.

B.J.Mulvaney, W.B.Richardson: Journal of Applied Physics, 1990, 67[6], 3197-9