A previously published point defect impurity pair diffusion model was modified in order to simulate the coupled diffusion of P and self-interstitials in P-implanted material. The assumed existence of implantation-produced, but empirically determined initial interstitial distributions of Gaussian type, permitted the net effect of transient enhanced diffusion to be simulated. In this way, an improved model for P diffusion could be developed for a wide range of ion implantation and annealing conditions.

H.U.Jäger, T.Feudel, S.Ulbricht: Physica Status Solidi A, 1989, 116[2], 571-81