A general model was described, for dopant diffusion via dopant-defect pairs which comprised all possible charge states of the species. Local equilibrium was assumed for electronic processes but not for chemical processes. By using this method, all of the backward reaction rate coefficients could be replaced by the forward reaction rate coefficients, plus 2 new parameters. By introducing the intrinsic diffusion coefficient, one of the 2 new parameters could also be replaced. There was therefore only 1 constant parameter, instead of all of the backward reaction rate coefficients. In addition, the model automatically yielded correct results in the intrinsic case. Several simulations of P diffusion were presented, and the results were compared with published experimental data. Very good agreement between simulation and experiment was obtained. A complete set of parameters was derived for P diffusion in Si at temperatures ranging from 900 to 1200C.

K.Ghaderi, G.Hobler: Journal of the Electrochemical Society, 1995, 142[5], 1654-8