The oxidation-enhanced diffusion of P was investigated over a wide range of oxidation rates, as controlled by varying the initial oxide thickness and the O partial pressure in the ambient. Oxidation-retarded diffusion during high-temperature oxidation of (100)-oriented samples was here observed for the first time at very low oxidation rates. Over the present range of experimental data, the conventional oxidation-enhanced diffusion formula, Da/DA* = 1 + ARn, was found to be unsuitable for describing the oxidation-enhanced diffusion effect over a wide range of oxidation rates. A new model for the oxidation rate dependence of oxidation-enhanced diffusion was proposed. This took account of the behavior of Si self-interstitials at the Si/SiO2 interface. There, a strong correlation was noted between the self-interstitial concentration and the oxidation reaction kinetics.

Y.Shibata, S.Hashimoto, K.Taniguchi, C.Hamaguchi: Journal of the Electrochemical Society, 1992, 139[1], 231-6