The oxidation-enhanced or oxidation-retarded diffusion of substitutional impurities is usually expressed in terms of equations which involve self-interstitial (I) and vacancy (V) concentrations. By using the asymptotic forms of the solutions to these equations, an approximate relationship between I and V was obtained. Identification of this approximate relationship with that for local equilibrium between I and V gave a simple method for obtaining mathematically self-consistent solutions to the oxidation-enhanced and oxidation-retarded diffusion equations. In this way, I and V were obtained as functions of the diffusion time. The fractional component of the interstitialcy mechanism for the oxidation-enhanced diffusion of P was obtained. The value of d1P was 0.93 at 1100C.

T.Okino: Japanese Journal of Applied Physics 1, 1992, 31[4], 965-9