A computer study was made of the accelerated diffusion of impurities which were introduced by high-temperature implantation. The diffusion equations were solved by using the finite difference method. It was assumed that the acceleration was due to the presence of an excess of point defects, and was proportional to their change in concentration with depth. The calculated profiles were compared with data on the implantation of P (at 900C) to doses of between 3 x 1013 and 1016/cm2. It was found that the dopant profiles which were observed after implantation agreed well with the results of calculations which assumed that the diffusion length of the point defects was 500nm.

L.N.Aleksandrov, T.V.Bondareva, G.A.Kachurin, I.E.Tyschenko: Fizika i Tekhnika Poluprovodnikov, 1991, 25[2], 227-30 (Soviet Physics - Semiconductors, 1991, 25[2], 137-9)